Through silicon via impact on above BEoL Time Dependent Dielectric Breakdown

Through silicon via impact on above BEoL Time Dependent Dielectric Breakdown

The impact of Through Silicon Via (TSV) on above BEoL dielectric reliability is studied. Time Dependent Dielectric Breakdown (TDDB) is performed on copper dual damascene combs, fabricated in a 65 nm technology node with a SiOCH low-k dielectric, and designed above 10μm diameter and 80μm thick TSVs,...

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Bibliographic Details
Published in:2012 IEEE International Integrated Reliability Workshop Final Report pp. 41 - 44
Main Authors: Frank, T., Chery, E., Chappaz, C., Arnaud, L., Anghel, L.
Format: Conference Proceeding
Language:English
Published: IEEE 01-10-2012
Subjects:
Dielectric breakdown
Dielectrics
Reliability
Silicon
Stress
Through-silicon vias
Online Access:Get full text
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Summary:The impact of Through Silicon Via (TSV) on above BEoL dielectric reliability is studied. Time Dependent Dielectric Breakdown (TDDB) is performed on copper dual damascene combs, fabricated in a 65 nm technology node with a SiOCH low-k dielectric, and designed above 10μm diameter and 80μm thick TSVs, processed through a via-middle approach.
ISBN:1467327492
9781467327497
ISSN:1930-8841
2374-8036
DOI:10.1109/IIRW.2012.6468916