A 1.5-88 GHz 19.5 dBm output power triple stacked HBT InP distributed amplifier

A 1.5-88 GHz 19.5 dBm output power triple stacked HBT InP distributed amplifier

We demonstrate a wideband and high power distributed amplifier (DA) using an indium phosphide (InP) double heterojunction bipolar transistor (HBT) process. For the first time, a triple stack HBT topology is used in an InP DA to achieve high power and high linearity. The 1.2 mm × 0.7 mm fabricated ch...

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Bibliographic Details
Published in:2017 IEEE MTT-S International Microwave Symposium (IMS) pp. 20 - 23
Main Authors: Nguyen, Duy P., Stameroff, Alexander N., Anh-Vu Pham
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2017
Subjects:
Bandwidth
distributed amplifier
Distributed amplifiers
Gain
III-V semiconductor materials
Indium phosphide
InP
MMIC
Power amplifiers
Power generation
stacked-HBT
wideband
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Summary:We demonstrate a wideband and high power distributed amplifier (DA) using an indium phosphide (InP) double heterojunction bipolar transistor (HBT) process. For the first time, a triple stack HBT topology is used in an InP DA to achieve high power and high linearity. The 1.2 mm × 0.7 mm fabricated chip exhibits a measured gain of 16 dB, maximum output power of 19.5 dBm and output third order intercept point (OIP3) of 27.5 dBm. The bandwidth covers 1.5-88 GHz. This makes the gain-bandwidth product (GBP) 546 GHz. To the best of the authors' knowledge, this work reports the highest output power and OIP3 over a wide bandwidth among all published InP distributed amplifiers to date.
DOI:10.1109/MWSYM.2017.8059080