Phase Change Memory: Scaling and applications

• Published in: Proceedings of the IEEE 2012 Custom Integrated Circuits Conference pp. 1 - 7
• Main Authors: Jeyasingh, R., Jiale Liang, Caldwell, M. A., Kuzum, D., Wong, H.-S P.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-09-2012
• Subjects: Computer architecture; Electrodes; Microprocessors; Nanoparticles; Neurons; Phase change materials; Programming
• ISBN: 9781467315555; 1467315559
• ISSN: 0886-5930; 2152-3630
• DOI: 10.1109/CICC.2012.6330621

Phase Change Memory (PCM) technology is a promising candidate for the future non-volatile memory applications. Scaling of PCM into the sub-10 nm regime has been demonstrated using novel applications of nanofabrication techniques. PCM devices using solution-processed GeTe nanoparticles of diameter range 1.8-3.4nm has been demonstrated. Highly scaled (<;2nm) PCM cross-point device using carbon nanotube as the electrode is fabricated proving the scalability of PCM to ultra small dimensions. The use of PCM as a nanoelectronic synapse for neuromorphic computation is also demonstrated as an illustration of PCM application beyond digital memory.