Extreme Temperature (> 200 °C), Radiation Hard (> 1 Mrad), Dense (sub-50 nm CD), Fast (2 ns write pulses), Non-Volatile Memory Technology

• Published in: 2022 IEEE International Memory Workshop (IMW) pp. 1 - 4
• Main Authors: Suryavanshi, Saurabh V., Yeric, Greg, Irby, Max, Huang, X. M. Henry, Rosendale, Glen, Shifren, Lucian
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-05-2022
• Subjects: automotive; Color; defense; Green products; harsh environment; high temperature; industrial; non-volatile memory; Nonvolatile memory; rad-hard; Resistance; SiC; Silicon carbide; Silicon-on-insulator; space; Temperature distribution
• ISSN: 2573-7503
• DOI: 10.1109/IMW52921.2022.9779251

We have developed an ultra-dense (sub-50 nm device diameter), ultra-fast (2 ns write pulse), non-polar, non-volatile memory that can operate at > 200°C temperatures while being immune to radiation (> 1 Mrad (SiO 2 )). Our technology, CeRAM, is integrated into the back-end-of-line (BEOL) 1 kb arrays and is compatible with high-temperature substrates including SiC, GaN, as well as Silicon on insulator (SOI). CeRAM can retain its memory state at 400°C for one hour bake. Such characteristics are ideal for multiple applications that include automotive, industrial mining and drilling, as well as defense and space.