Compact modeling and simulation of PD-SOI MOSFETs: Current status and challenges

This paper reviews the status and challenges of the modeling partially-depleted silicon-on-insulator transistors. Many challenges stem from the floating-body potential, which offers advantages in terms of performance and leakage, but presents complex electrical behavior. Circuit simulator considerat...

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Published in:2008 IEEE Custom Integrated Circuits Conference pp. 265 - 272
Main Authors: Jung-Suk Goo, Williams, R.Q., Workman, G.O., Qiang Chen, Sungjae Lee, Nowak, E.J.
Format: Conference Proceeding
Language:English
Published: IEEE 01-09-2008
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Abstract This paper reviews the status and challenges of the modeling partially-depleted silicon-on-insulator transistors. Many challenges stem from the floating-body potential, which offers advantages in terms of performance and leakage, but presents complex electrical behavior. Circuit simulator considerations and the importance of model standardization are also highlighted.
AbstractList This paper reviews the status and challenges of the modeling partially-depleted silicon-on-insulator transistors. Many challenges stem from the floating-body potential, which offers advantages in terms of performance and leakage, but presents complex electrical behavior. Circuit simulator considerations and the importance of model standardization are also highlighted.
Author Workman, G.O.
Nowak, E.J.
Jung-Suk Goo
Sungjae Lee
Williams, R.Q.
Qiang Chen
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  surname: Nowak
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  organization: SOI Compact Modeling Group, IBM Corp., Essex Junction, VT
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Snippet This paper reviews the status and challenges of the modeling partially-depleted silicon-on-insulator transistors. Many challenges stem from the floating-body...
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StartPage 265
SubjectTerms Calibration
Circuit simulation
Circuit topology
Contacts
Fitting
Impact ionization
MOSFETs
Numerical models
Semiconductor device modeling
Silicon on insulator technology
Title Compact modeling and simulation of PD-SOI MOSFETs: Current status and challenges
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