Compact modeling and simulation of PD-SOI MOSFETs: Current status and challenges

Compact modeling and simulation of PD-SOI MOSFETs: Current status and challenges

This paper reviews the status and challenges of the modeling partially-depleted silicon-on-insulator transistors. Many challenges stem from the floating-body potential, which offers advantages in terms of performance and leakage, but presents complex electrical behavior. Circuit simulator considerat...

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Bibliographic Details
Published in:2008 IEEE Custom Integrated Circuits Conference pp. 265 - 272
Main Authors: Jung-Suk Goo, Williams, R.Q., Workman, G.O., Qiang Chen, Sungjae Lee, Nowak, E.J.
Format: Conference Proceeding
Language:English
Published: IEEE 01-09-2008
Subjects:
Calibration
Circuit simulation
Circuit topology
Contacts
Fitting
Impact ionization
MOSFETs
Numerical models
Semiconductor device modeling
Silicon on insulator technology
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Description
Summary:This paper reviews the status and challenges of the modeling partially-depleted silicon-on-insulator transistors. Many challenges stem from the floating-body potential, which offers advantages in terms of performance and leakage, but presents complex electrical behavior. Circuit simulator considerations and the importance of model standardization are also highlighted.
ISBN:9781424420186
1424420180
ISSN:0886-5930
2152-3630
DOI:10.1109/CICC.2008.4672074