Design of a Wideband Bandpass Stacked HBT Distributed Amplifier in InP

Design of a Wideband Bandpass Stacked HBT Distributed Amplifier in InP

We describe a wideband, bandpass distributed amplifier designed in an indium phosphide (InP) heterojunction bipolar transistor (HBT) process. A HBT gain cell containing a double stacked-HBT stage is used along with a new bandpass architecture to design a bandpass distributed amplifier with a bandwid...

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Bibliographic Details
Published in:2018 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 1 - 5
Main Authors: Killeen, Natalie S., Nguyen, Duy P., Stameroff, Alexander N., Anh-Vu Pham, Hurst, Paul J.
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2018
Subjects:
bandpass
Bandwidth
distributed amplifier
Distributed amplifiers
Gain
HBT
Heterojunction bipolar transistors
III-V semiconductor materials
Indium phosphide
InP
MMIC
Power amplifiers
stacked
wideband
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Description
Summary:We describe a wideband, bandpass distributed amplifier designed in an indium phosphide (InP) heterojunction bipolar transistor (HBT) process. A HBT gain cell containing a double stacked-HBT stage is used along with a new bandpass architecture to design a bandpass distributed amplifier with a bandwidth of 65-145 GHz. The proposed amplifier exhibits a simulated average gain of 12.5 dB and a maximum output power of 17 dBm.
ISSN:2379-447X
DOI:10.1109/ISCAS.2018.8350931