Transient behavior of IGBTs submitted to fault under load conditions

• Published in: Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) Vol. 3; pp. 2182 - 2189 vol.3
• Main Authors: Musumeci, S., Pagano, R., Raciti, A., Frisina, F., Melito, M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2002
• Subjects: Circuit faults; Circuit testing; Electric resistance; Electric variables; Electronic ballasts; Immune system; Insulated gate bipolar transistors; Manufacturing; Strips; Switches
• ISBN: 0780374207; 9780780374201
• ISSN: 0197-2618; 2576-702X
• DOI: 10.1109/IAS.2002.1043834

The paper deals with the short circuit behavior during fault under load (FUL) conditions occurring on IGBT devices. The experimental switching transients in FUL with inductive load have been widely investigated. The devices have been tested in several working conditions accounting for the spread of the device characteristics, the parasitic due to the board layout, and the gate driving characteristics aiming to evaluate the switching performances and the influence of the parameters involved into the transient. The effect of the device temperature has been taken into account too. The experimental tests have been carried out using as a workbench a chopper circuit equipped with IGBT devices. As in medium and large power range converters the use of multiple string of IGBT devices is worth to be considered, the parallel and series connections experiencing FUL conditions have been also investigated.