A predictive semi-analytical threshold voltage model for deep-submicron MOSFET's

A predictive semi-analytical threshold voltage model for deep-submicron MOSFET's

A compact threshold voltage model is developed for the prediction of deep-submicron MOSFETs scaling characteristic based on comprehensive 2-D device simulation, empirical formulation, and correlation to experimental data. The model incorporates the nonuniformities and nonlinearities from 2-D device...

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Bibliographic Details
Published in:Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) pp. 114 - 117
Main Authors: Lim, K.Y., Zhou, X., Lim, D., Zu, Y., Ho, H.M., Loiko, K., Lau, C.K., Tse, M.S., Choo, S.C.
Format: Conference Proceeding
Language:English
Published: IEEE 1998
Subjects:
Chemical technology
Doping
Equations
Integrated circuit modeling
MOSFET circuits
Predictive models
Semiconductor device modeling
Semiconductor process modeling
Surface fitting
Threshold voltage
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Summary:A compact threshold voltage model is developed for the prediction of deep-submicron MOSFETs scaling characteristic based on comprehensive 2-D device simulation, empirical formulation, and correlation to experimental data. The model incorporates the nonuniformities and nonlinearities from 2-D device physics, relates to process variables, and yet is efficient to use.
ISBN:9780780349322
0780349326
DOI:10.1109/HKEDM.1998.740200