A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs

• Published in: Proceedings of International Electron Devices Meeting pp. 933 - 936
• Main Authors: Hareland, S.A., Krishnamurthy, S., Jallepalli, S., Yeap, C.-F., Hasnat, K., Tasch, A.F., Maziar, C.M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1995
• Subjects: Computational modeling; Electric variables; Electrons; MOS devices; MOSFETs; Predictive models; Quantization; Quantum computing; Quantum mechanics; Threshold voltage
• ISBN: 0780327004; 9780780327009
• ISSN: 0163-1918; 2156-017X
• DOI: 10.1109/IEDM.1995.499369

This paper describes the development and implementation of a computationally efficient and accurate model for the prediction of quantum mechanical (QM) effects in electron inversion layers of MOS devices. Although properties of electrons in inversion layers have been studied and modeled for almost three decades, continued scaling of MOSFETs has led to a renewed interest and need in modeling these effects. Much of this interest has been stimulated by the inability of widely used, contemporary, device simulation tools to capture these effects in classical models and in turn failing to predict key device performance parameters such as the threshold voltage and the effective oxide thickness. This work emphasizes a simulator-appropriate model than can be routinely applied to design and evaluate the electrical characteristics of deep submicron N-channel MOSFETs.