Use of accurate MOS models for optimizing resonant converter designs

AC and DC power MOSFET models for the design of resonant power converters are described. The influence of device parameters on the circuit performance is investigated in detail. A 1 MHz resonant converter circuit is simulated, and circuit waveforms are shown to agree with breadboard measurements wit...

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Bibliographic Details
Published in:Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting pp. 1564 - 1568 vol.2
Main Authors: Franz, G.A., Walden, J.P., Scott, R.S., Bicknell, W.H., Steigerwald, R.L.
Format: Conference Proceeding
Language:English
Published: IEEE 1990
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Summary:AC and DC power MOSFET models for the design of resonant power converters are described. The influence of device parameters on the circuit performance is investigated in detail. A 1 MHz resonant converter circuit is simulated, and circuit waveforms are shown to agree with breadboard measurements with a high level of accuracy. Thus, design optimization can be performed through simulations without the need of breadboard iterations.< >
ISBN:9780879425531
0879425539
DOI:10.1109/IAS.1990.152394