Soft breakdown triggers for large area capacitors under constant voltage stress

• Published in: 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) pp. 393 - 398
• Main Authors: Schmitz, J., Kretschmann, H.J., Tuinhout, H.P., Woerlee, P.H.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2001
• Subjects: Breakdown voltage; Capacitors; Carbon capture and storage; Dielectric breakdown; Electric breakdown; Laboratories; MOS devices; Stress; Testing; Time measurement
• ISBN: 0780365879; 9780780365872
• DOI: 10.1109/RELPHY.2001.922932

This work quantitatively compares breakdown triggers for constant voltage stress of large area NMOS capacitors (up to 10 mm/sup 2/) with 1.8 to 12 nm gate oxide thickness (with negative V/sub G/). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation (RMS). We also present data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level.