Improvement of thermal stability of via resistance in dual damascene copper interconnection

Improvement of thermal stability of via resistance in dual damascene copper interconnection

Thermal stability of via resistance in the multilevel dual damascene Cu interconnection was investigated. The via resistance stability strongly depends on via size, via density and width of connecting Cu wires. The significant via-resistance shift was introduced by stress-induced voiding. To avoid t...

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Published in:International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) pp. 123 - 126
Main Authors: Oshima, T., Tamaru, T., Ohmori, K., Aoki, H., Ashihara, H., Saito, T., Yamaguchi, H., Miyauchi, M., Torii, K., Murata, J., Satoh, A., Miyazaki, H., Hinode, K.
Format: Conference Proceeding
Language:English
Japanese
Published: IEEE 2000
Subjects:
Adhesives
Annealing
Circuit stability
Cooling
Copper
Integrated circuit interconnections
Thermal degradation
Thermal resistance
Thermal stability
Tin
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Abstract Thermal stability of via resistance in the multilevel dual damascene Cu interconnection was investigated. The via resistance stability strongly depends on via size, via density and width of connecting Cu wires. The significant via-resistance shift was introduced by stress-induced voiding. To avoid the voiding failure, optimization of heat treatments after electroplating (EP)-Cu deposition are necessary for both stability of Cu films and adhesion of barrier layer with Cu. Thermal stress balance between Cu wires and inter-level-dielectric (ILD) is also important to suppress the via degradation. The dual damascene structure with lower-stress and lower-Young's modulus ILD films such as FSG can provide wider process windows for the stability of the via resistance.
AbstractList Thermal stability of via resistance in the multilevel dual damascene Cu interconnection was investigated. The via resistance stability strongly depends on via size, via density and width of connecting Cu wires. The significant via-resistance shift was introduced by stress-induced voiding. To avoid the voiding failure, optimization of heat treatments after electroplating (EP)-Cu deposition are necessary for both stability of Cu films and adhesion of barrier layer with Cu. Thermal stress balance between Cu wires and inter-level-dielectric (ILD) is also important to suppress the via degradation. The dual damascene structure with lower-stress and lower-Young's modulus ILD films such as FSG can provide wider process windows for the stability of the via resistance.
Author Murata, J.
Tamaru, T.
Ohmori, K.
Torii, K.
Satoh, A.
Hinode, K.
Miyauchi, M.
Aoki, H.
Yamaguchi, H.
Saito, T.
Oshima, T.
Ashihara, H.
Miyazaki, H.
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  fullname: Hinode, K.
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Snippet Thermal stability of via resistance in the multilevel dual damascene Cu interconnection was investigated. The via resistance stability strongly depends on via...
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StartPage 123
SubjectTerms Adhesives
Annealing
Circuit stability
Cooling
Copper
Integrated circuit interconnections
Thermal degradation
Thermal resistance
Thermal stability
Tin
Title Improvement of thermal stability of via resistance in dual damascene copper interconnection
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