A Full G-band Power Amplifier with 34% Peak PAE in InP-DHBT Technology

• Published in: 2023 18th European Microwave Integrated Circuits Conference (EuMIC) pp. 1 - 4
• Main Authors: Hossain, M., Doerner, R., Heinrich, W., Krozer, V.
• Format: Conference Proceeding
• Language: English
• Published: European Microwave Association (EuMA) 18-09-2023
• Subjects: DH-HEMTs; InP double heterojunction bipolar transistor (DHBT); Microwave amplifiers; Microwave circuits; Microwave integrated circuits; Microwave transistors; monolithic microwave integrated circuit (MMIC); power amplifier (PA); Power amplifiers; Power demand; transferred-substrate process (TS)
• DOI: 10.23919/EuMIC58042.2023.10288782

This paper presents a highly efficient full G-band power amplifier (PA) using 500 nm InP-DHBT technology. It consists of 3 stages using a cascade unit power cell. Measurements show in average 12 dB small signal gain in the range 140-220 GHz. At 219 GHz, a saturated output power (Psat) around 13 dBm is achieved. The dc power consumption is 58 mW and results in a power-added efficiency (PAE) of up to 30% at 219 GHz. The peak PAE of 34% is achieved at 160 GHz. The chip area is only 1.5x0.7 mm 2 . To the knowledge of the authors, this is the highest efficiency for a full G-band amplifier published so far.