Leakage Current Degradation of Gallium Nitride Transistors Due to Heavy Ion Tests

Leakage Current Degradation of Gallium Nitride Transistors Due to Heavy Ion Tests

Commercial gallium nitride high-electron mobility transistors are tested at Texas A&M University cyclotron. Degradation of gate and drain currents is characterized.

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Bibliographic Details
Published in:2015 IEEE Radiation Effects Data Workshop (REDW) pp. 1 - 10
Main Authors: Olson, Brian D., Ingalls, J. David, Rice, Casey H., Hedge, Casey C., Cole, Patrick L., Duncan, Adam R., Armstrong, Sarah E.
Format: Conference Proceeding
Language:English
Published: IEEE 01-07-2015
Subjects:
Current measurement
Gallium nitride
HEMTs
Leakage currents
Logic gates
MODFETs
Radiation effects
Online Access:Get full text
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Description
Summary:Commercial gallium nitride high-electron mobility transistors are tested at Texas A&M University cyclotron. Degradation of gate and drain currents is characterized.
ISBN:9781467376419
1467376418
DOI:10.1109/REDW.2015.7336720