2-μm InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodes

We report fabrication and characterization of light-emitting diodes operating at room temperature with a peak wavelength of ~2.0 mum by using heterostructures of InGaSb/AlGaAsSb quantum wells grown by molecular beam epitaxy on GaSb substrates.

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Bibliographic Details
Published in:	2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference pp. 1 - 2
Main Authors:	Withers, N.J., Hongjun Cao, Smolyakov, G.A., Kaspi, R., Osinski, M.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-05-2006
Subjects:	(230.3670) Light-emitting diodes (230.5590) Quantum-well devices Current measurement Fabrication Gallium Light emitting diodes Metals Molecular beam epitaxial growth Optical device fabrication
Online Access:	Get full text
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Description
Summary:	We report fabrication and characterization of light-emitting diodes operating at room temperature with a peak wavelength of ~2.0 mum by using heterostructures of InGaSb/AlGaAsSb quantum wells grown by molecular beam epitaxy on GaSb substrates.
ISSN:	2160-9004
DOI:	10.1109/CLEO.2006.4628797