Novel Si-based Optoelectronic Switching Device: Light to Latch

Novel Si-based Optoelectronic Switching Device: Light to Latch

A novel, high performance optoelectronic switch is introduced. The device is a Si- MOSFET with Ge gate that can be fabricated at the nanoscale with very low capacitance. Current gain of up to 1000times is demonstrated.

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Bibliographic Details
Published in:2007 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors: Okyay, A.K., Pethe, A.J., Kuzum, D., Latif, S., Miller, D.A.B., Saraswat, K.C.
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2007
Subjects:
Biomedical optical imaging
Capacitance
Latches
Nanoscale devices
Optical interconnections
Optical modulation
Optical receivers
Optical transmitters
Stimulated emission
Switches
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Description
Summary:A novel, high performance optoelectronic switch is introduced. The device is a Si- MOSFET with Ge gate that can be fabricated at the nanoscale with very low capacitance. Current gain of up to 1000times is demonstrated.
ISSN:2160-9004
DOI:10.1109/CLEO.2007.4452611