Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays

• Published in: 2012 Symposium on VLSI Technology (VLSIT) pp. 37 - 38
• Main Authors: Wootae Lee, Jubong Park, Jungho Shin, Jiyong Woo, Seonghyun Kim, Choi, G., Seungjae Jung, Sangsu Park, Daeseok Lee, Euijun Cha, Hyung Dong Lee, Soo Gil Kim, Chung, S., Hyunsang Hwang
• Format: Conference Proceeding
• Language: English; Japanese
• Published: IEEE 01-06-2012
• Subjects: Current density; Leakage current; Low voltage; Performance evaluation; Switches; Temperature measurement; Very large scale integration
• ISBN: 9781467308465; 1467308463
• ISSN: 0743-1562
• DOI: 10.1109/VLSIT.2012.6242449

We demonstrate a varistor-type bidirectional switch (VBS) with excellent selection property for future 3D bipolar resistive memory array. A highly non-linear VBS showed superior performances including high current density (>;3×10 7 A/cm 2 ) and high selectivity (~10 4 ). The non-linear I-V characteristics can be explained by varistor-type multi-layer tunnel barriers, which were formed by Ta incorporation into thin TiO 2 . Furthermore, the 1S1R device showed excellent suppression of leakage current (>;10 4 reduction) at 1/2V READ , which is promising for ultra-high density resistive memory applications.