Toward all-MOCVD grown InAs/GaAs quantum dot laser diode on a Si substrate for O-band telecommunication

In this paper, we will present the results of the InAs/GaAs quantum dot laser diode (QDLD) utilizing MOCVD system. GaAs/Si template has only 1.5 × 107 cm-2 of threading dislocation density and the QDLD on GaAs substrate shows continuous-wave operation characteristics up to 75 °C.

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Bibliographic Details
Published in:	2024 IEEE Silicon Photonics Conference (SiPhotonics) pp. 1 - 3
Main Authors:	Kim, HoSung, Park, Honghwi, Geum, Dae-Myeong, Lee, Seungchul, Ko, Young-Ho, Ahn, Joon Tae, Kim, Kap-Joong, Kim, Duk-Jun, Han, Won Seok
Format:	Conference Proceeding
Language:	English
Published:	IEEE 15-04-2024
Subjects:	Communications technology component Diode lasers formatting Gallium arsenide insert MOCVD Quantum dot lasers Silicon photonics style styling Substrates
Online Access:	Get full text
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Description
Summary:	In this paper, we will present the results of the InAs/GaAs quantum dot laser diode (QDLD) utilizing MOCVD system. GaAs/Si template has only 1.5 × 107 cm-2 of threading dislocation density and the QDLD on GaAs substrate shows continuous-wave operation characteristics up to 75 °C.
ISSN:	1949-209X
DOI:	10.1109/SiPhotonics60897.2024.10543451