Experimental Analysis of MISHEMT Multiple Conductions from 200K to 450K

Experimental Analysis of MISHEMT Multiple Conductions from 200K to 450K

In this work, the multiple conductions of a GaN based Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) when operating in a temperature range from 200K to 450K are evaluated experimentally. It is observed that the threshold voltage decreases linearly with temperature from 200...

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Bibliographic Details
Published in:2022 36th Symposium on Microelectronics Technology (SBMICRO) pp. 1 - 4
Main Authors: Perina, Welder F., Martino, Joao A., Agopian, Paula G. D.
Format: Conference Proceeding
Language:English
Published: IEEE 22-08-2022
Subjects:
basic parameters
GaN
HEMTs
heterostructure
Microelectronics
MISHEMT
MODFETs
Performance evaluation
Photonic band gap
temperature
Temperature distribution
Threshold voltage
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Summary:In this work, the multiple conductions of a GaN based Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) when operating in a temperature range from 200K to 450K are evaluated experimentally. It is observed that the threshold voltage decreases linearly with temperature from 200K to room temperature. For higher temperatures, there is a competition among the following effects: the bandgap narrowing, depletion depth and Fermi potential reductions, resulting in the increase of threshold voltage. The analysis of the subthreshold swing presents very high values indicating a harsh degradation. These behaviors are further investigated through the MISHEMT transconductance, which presents two different conduction mechanism (double peak) at 350 K for all channel lengths, affecting the total drain current.
DOI:10.1109/SBMICRO55822.2022.9881049