Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap

• Published in: 2021 IEEE Latin America Electron Devices Conference (LAEDC) pp. 1 - 4
• Main Authors: Macambira, Christian N., Agopian, Paula G. D., Martino, Joao A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 19-04-2021
• Subjects: Bio-TFET; Biosensor; Dielectric constant; Fringing Field; Molecular biophysics; Numerical simulation; Performance evaluation; Permittivity; Sensitivity; Source Underlap; TFETs; Tunneling
• DOI: 10.1109/LAEDC51812.2021.9437937

In this paper, the sensitivity of the fringing field n-type tunneling field-effect transistor biosensor (Bio-nTFET) was investigated over the influence of positive fixed charges density (Q Bio ) and dielectric constant k, in the source underlap (L US ) region. Numerical simulations were performed using Sentaurus TCAD device simulator. The presence of different biomolecules, in the L US region, affects the drain current of the on-state (I On ). It is shown that the sensitivity of the Bio-nTFET increases 3 orders of magnitude from k = 1 to k = 10 due to the improved fringing field that reduces the tunneling length resulting in a higher tunneling current. The sensibility also increases for a higher values of Q Bio . The highest sensitivity value obtained in this work was 6.10 3 A/A for QBio = 1.10 12 cm -2 and k = 10. The proposed device shows great potential as a biosensor based on TFET devices.