Total Ionizing Dose and Reliability Evaluation of the ST-DDR4 Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)

Total Ionizing Dose and Reliability Evaluation of the ST-DDR4 Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)

We present total ionizing dose (TID) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM, and its effects on the reliability of the magnetic tunnel junctions (MTJs).

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Bibliographic Details
Published in:2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) pp. 1 - 5
Main Authors: Vartanian, Sergeh, Yang-Scharlotta, Jean, Allen, Gregory R., Daniel, Andrew C., Costanzo, Daniel, Mancoff, Frederick B., Symalla, Daniel, Olsen, Andy
Format: Conference Proceeding
Language:English
Published: IEEE 01-07-2022
Subjects:
Magnetoresistive devices
Nonvolatile memory
Performance evaluation
Reliability
SDRAM
Torque
Total ionizing dose
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Description
Summary:We present total ionizing dose (TID) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM, and its effects on the reliability of the magnetic tunnel junctions (MTJs).
ISSN:2154-0535
DOI:10.1109/REDW56037.2022.9921476