A Ku-band CMOS low-noise amplifier

A Ku-band CMOS low-noise amplifier

A Ku-band monolithic low-noise amplifier is presented in this paper. This LNA fabricated in commercial 0.18-/spl mu/m CMOS technology is a two-stage common-source design instead of cascode configuration for lower noise performance. This CMOS LNA demonstrates a gain of better than 10 dB and a NF of b...

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Bibliographic Details
Published in:2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks pp. 183 - 186
Main Authors: Kuo-Liang Deng, Ming-Da Tsai, Chin-Shen Lin, Kun-You Lin, Wang, Huei, Wang, S.H., Lien, W.Y., Chem, G.J.
Format: Conference Proceeding
Language:English
Published: IEEE 2005
Subjects:
CMOS
CMOS technology
Gallium arsenide
Inductors
Ku band
Low-noise amplifiers
microwave
MMICs
Noise measurement
Performance gain
Radio frequency
RFIC
Semiconductor device measurement
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Summary:A Ku-band monolithic low-noise amplifier is presented in this paper. This LNA fabricated in commercial 0.18-/spl mu/m CMOS technology is a two-stage common-source design instead of cascode configuration for lower noise performance. This CMOS LNA demonstrates a gain of better than 10 dB and a NF of better than 3.2 dB from 14 to 15 GHz. The measured output P/sub 1dB/ is about 5.2 dBm and input IP3 is 1.6 dBm. The chip size including all testing pads is 0.88 /spl times/ 0.77 mm/sup 2/.
ISBN:9780780393721
0780393724
DOI:10.1109/RFIT.2005.1598906