Low frequency noise characteristics of bow-tie THz detectors based on InGaAs

Experimental investigation of low frequency noise characteristics of the In0.53Ga0.47As/InP bow-tie terahertz detectors with a near monolayer of InAs has been carried out in (77-300) K temperature range. Spectral density of voltage fluctuations of investigated diodes at room temperature is proportio...

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Bibliographic Details
Published in:	2015 International Conference on Noise and Fluctuations (ICNF) pp. 1 - 4
Main Authors:	Pralgauskaite, S., Matukas, J., Lisauskas, A., Palenskis, V., Kasalynas, I., Minkevicius, L., Seliuta, D., Valusis, G.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-06-2015
Subjects:	1/f-type noise bow-tie diode Charge carriers Detectors Fluctuations Imaging Indium phosphide Lorentzian-type noise Noise Semiconductor diodes
Online Access:	Get full text
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Summary:	Experimental investigation of low frequency noise characteristics of the In0.53Ga0.47As/InP bow-tie terahertz detectors with a near monolayer of InAs has been carried out in (77-300) K temperature range. Spectral density of voltage fluctuations of investigated diodes at room temperature is proportional to 1/f, while below 200 K Lorentzian-type spectra dominate. Characteristic times of the observed charge carrier capture and release processes are distributed between ten microseconds and millisecond; activation energy of the processes is in the range from 0,04 eV to 0,36 eV.
DOI:	10.1109/ICNF.2015.7288593