Anodic bonding technology of slender glass tube and silicon in pressure sensor packaging
Anodic bonding technology of semiconductor silicon and glass is a key technology of micro electronic mechanical system (MEMS). Because of large bonding strength and simple process, silicon-glass anodic bonding is popular in piezoresistive pressure sensor. In order to improve sensors performance, the...
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Published in: | 2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013) pp. 813 - 816 |
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01-12-2013
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Abstract | Anodic bonding technology of semiconductor silicon and glass is a key technology of micro electronic mechanical system (MEMS). Because of large bonding strength and simple process, silicon-glass anodic bonding is popular in piezoresistive pressure sensor. In order to improve sensors performance, the glass tube is designed to be elongated and slender. However, the special design brings difficulty for anodic bonding. The traditional bonding way is unavailable and bonding failure rate increases dramatically. In this paper, the bonding process of slender glass tube and silicon is present, and a novel bonding device is designed based on the silicon-glass bonding process. The results show that the bonding is the best when the cantilever elastic deformation is less than 0.5 mm interface temperature loaded from the silicon is 415°C and the voltage 1200 V is loaded from the position H=2 mm. |
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AbstractList | Anodic bonding technology of semiconductor silicon and glass is a key technology of micro electronic mechanical system (MEMS). Because of large bonding strength and simple process, silicon-glass anodic bonding is popular in piezoresistive pressure sensor. In order to improve sensors performance, the glass tube is designed to be elongated and slender. However, the special design brings difficulty for anodic bonding. The traditional bonding way is unavailable and bonding failure rate increases dramatically. In this paper, the bonding process of slender glass tube and silicon is present, and a novel bonding device is designed based on the silicon-glass bonding process. The results show that the bonding is the best when the cantilever elastic deformation is less than 0.5 mm interface temperature loaded from the silicon is 415°C and the voltage 1200 V is loaded from the position H=2 mm. |
Author | Tao Chen Yangjun Wang Lining Sun Jizhu Liu Liguo Chen Mingqiang Pan |
Author_xml | – sequence: 1 surname: Tao Chen fullname: Tao Chen email: cht22@sina.com organization: Robot. & Microsyst. Center, Soochow Univ., Suzhou, China – sequence: 2 surname: Lining Sun fullname: Lining Sun email: lnsun@hit.edu.cn organization: Robot. & Microsyst. Center, Soochow Univ., Suzhou, China – sequence: 3 surname: Mingqiang Pan fullname: Mingqiang Pan email: pmqwl@163.com organization: Robot. & Microsyst. Center, Soochow Univ., Suzhou, China – sequence: 4 surname: Yangjun Wang fullname: Yangjun Wang email: wyjwyj791120@126.com organization: Robot. & Microsyst. Center, Soochow Univ., Suzhou, China – sequence: 5 surname: Jizhu Liu fullname: Jizhu Liu email: liu_jizhu@163.com organization: Robot. & Microsyst. Center, Soochow Univ., Suzhou, China – sequence: 6 surname: Liguo Chen fullname: Liguo Chen email: clg@hit.edu.cn organization: Robot. & Microsyst. Center, Soochow Univ., Suzhou, China |
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Snippet | Anodic bonding technology of semiconductor silicon and glass is a key technology of micro electronic mechanical system (MEMS). Because of large bonding... |
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Title | Anodic bonding technology of slender glass tube and silicon in pressure sensor packaging |
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