A 250 GHz hetero-integrated VCO with 0.7 mW output power in InP-on-BiCMOS technology

This paper presents a 250 GHz hetero-integrated VCO using InP-on-BiCMOS technology. It consists of a single-ended Colpitts Voltage Controlled Oscillator (VCO) in 0.25 μm SiGe-BiCMOS technology and a common-emitter based frequency tripler in 0.8 μm transferred-substrate (TS) InP-HBT technology, which...

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Bibliographic Details
Published in:	2015 European Microwave Conference (EuMC) pp. 391 - 394
Main Authors:	Hossain, M., Weimann, N., Janke, B., Lisker, M., Meliani, C., Tillack, B., Kruger, O., Krozer, V., Heinrich, W.
Format:	Conference Proceeding
Language:	English
Published:	EuMA 01-09-2015
Subjects:	BiCMOS integrated circuits frequency tripler hetero-integration Heterojunction bipolar transistors III-V semiconductor materials Indium phosphide InP-DHBT InP-on-BiCMOS Power generation SiGe-BiCMOS THz frequencies transferred-substrate (TS) Tuning voltage controlled oscillator (VCO) Voltage-controlled oscillators
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Summary:	This paper presents a 250 GHz hetero-integrated VCO using InP-on-BiCMOS technology. It consists of a single-ended Colpitts Voltage Controlled Oscillator (VCO) in 0.25 μm SiGe-BiCMOS technology and a common-emitter based frequency tripler in 0.8 μm transferred-substrate (TS) InP-HBT technology, which are combined using a wafer-level BCB bonding process. The VCO operates at 83 GHz and the combined circuit delivers 0.7 mW output power at 250 GHz with 2% tuning range. This result documents recent advances of the hetero integrated process towards THz frequencies.
DOI:	10.1109/EuMC.2015.7345782