Design and Optimization of 20 GHz LC-VCOs in SiGe:C BiCMOS Technology

• Published in: 2008 4th IEEE International Conference on Circuits and Systems for Communications Vol. 4; pp. 648 - 652
• Main Authors: Verdier, J., Perez, J.C.N., Gontrand, C.
• Format: Conference Proceeding Journal Article
• Language: English
• Published: IEEE 2008
• Subjects: BiCMOS integrated circuits; Bipolar transistors; Costs; Design optimization; Frequency; Phase noise; Power generation; Topology; Tuning; Voltage-controlled oscillators
• ISBN: 9781424417070; 1424417074
• DOI: 10.1109/ICCSC.2008.143

The design and analysis of fully integrated voltage controlled oscillators (VCO) for 20 GHz low cost and low power communication system is presented in this paper. Two differential topologies have been studied: balanced Colpitts VCO and LC-VCO using a cross-coupled differential pair. We have focussed on oscillation frequency, tuning range, phase noise, and output power optimization and buffer stage specifications. SiGe:C hetero-junction bipolar transistors of f T =55 GHz have been used and produced with a monolithic BiCMOS technology.