Temperature-based Numerical Simulation investigation of the analog performance of AlGaN/GaN MOS-HEMT

• Published in: 2023 IEEE Devices for Integrated Circuit (DevIC) pp. 537 - 541
• Main Authors: Ruby, Mann, Shobha, Sharma, Sonam, Rewari, Gupta, R. S.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 07-04-2023
• Subjects: 2DEG; AlGaN/GaN; Cutoff frequency; Electric fields; HEMTs; MODFETs; MOS-HEMT; temperature; Temperature distribution; Temperature sensors; Wide band gap semiconductors
• DOI: 10.1109/DevIC57758.2023.10134957

High Electron Mobility Transistors (HEMTs) rooted on AlGaN/GaN are regarded as propitious candidates for high power and high speed applications. A simulation study was conducted in this paper to investigate the effect of different temperatures in the range of 100K-400K on varied parameters of MOS-HEMT (Metal Oxide Semiconductor HEMTs).The impact of varying the temperature on the transconductance, cutoff frequency, current gain, electric field, channel potential and power gain has been studied. It has been noted that MOSHEMT devices exhibit improved electrical performance at low temperatures and are less sensitive to temperature changes. The temperature sensitivity, Ron, saturation current, and transconductance of a device are all affected by electron mobility, and the 2DEG density decreases with temperature. This is due to the decrease in electron mobility with increasing temperature as electron scattering increases. The cut-off frequency reduces from 560.7 mS/mm to 238 mS/mm, the drain current drops from 0. 18A to 0.046 A, the current gain drops from 61.3 dB to 57 dB, and the cut-off frequency drops from 113.4 GHz to 45.4 GHz when the temperature rises from 100 K to 400 K. SILVACO ATLAS TCAD device simulator was used to run the simulations.