Flexible AZO Thin Film Transistors Fabricated at Room Temperature

Flexible AZO Thin Film Transistors Fabricated at Room Temperature

Flexible thin film transistors (TFTs) were fabricated on polyimide (PI) substrate at room temperature (RT). The channel layer, which adopted aluminum doped zinc oxide (AZO) thin film, was deposited by the co-sputtering method with Al and ZnO as the targets. During the fabrication process, the radio...

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Bibliographic Details
Published in:2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) pp. 299 - 303
Main Authors: Wang, Chao, Jia, Mingrui, Li, Chao, Yang, Fan
Format: Conference Proceeding
Language:English
Published: IEEE 31-07-2023
Subjects:
AZO
flexible
Performance evaluation
Radio frequency
Surface morphology
Temperature
Thin film transistors
Transistors
Zinc oxide
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Summary:Flexible thin film transistors (TFTs) were fabricated on polyimide (PI) substrate at room temperature (RT). The channel layer, which adopted aluminum doped zinc oxide (AZO) thin film, was deposited by the co-sputtering method with Al and ZnO as the targets. During the fabrication process, the radio frequency (RF) magnetron sputtering power of Al target was controlled to enhance the electrical performance of the AZO-TFTs. When the RF power of Al was 15 W, the device achieved the optimal on-off current ratio of 5.23 \times 10^{5}.
ISSN:2694-510X
DOI:10.1109/3M-NANO58613.2023.10305378