Enhanced Model For Low Leakage and Security Oriented 8T SRAM Cell

• Published in: 2023 International Conference on Communication, Circuits, and Systems (IC3S) pp. 1 - 5
• Main Authors: Singh, Mahesh k., Mishra, Govind
• Format: Conference Proceeding
• Language: English
• Published: IEEE 26-05-2023
• Subjects: Leakage power; power analysis; Security; SRAM Cell
• DOI: 10.1109/IC3S57698.2023.10169661

Nowadays, the use of electronic tools to store confidential and highly sensitive information has needed considerably and become crucial in many fields. A significant potential threat to these tools is the leaking of sensitive information by noninvasive side-channel attacks (SCAs). In particular, tool-based power analysis (PA) is a type of noninvasive side-channel attacks that uses the processed data that extracts via the device power dissipation. The power analysis measures the correlation between the instantaneous consumed power (IPA) by the tool and the processed and stored data. It uses this correlation to breach secret information or sensitive data. As we know, traditional SRAM cells are vulnerable to side-channel discharge power attacks. To make resiliency to these kinds of attacks, we propose a modified structure of SRAM cells by using 8T SRAM cell in the inner body that consumes less power and more immune to external Power analysis (PA) attacks. To illustrate the enhanced security of the modified memory array, the proposed design is implemented in Cadence Virtuoso software. The comparative study shows that the proposed model provides more security to the stored information and less leakage power compared to other cells.