Prevention of Schottky Contact Formation Between Probing Needles and Silicon for Power Semiconductor Devices

Prevention of Schottky Contact Formation Between Probing Needles and Silicon for Power Semiconductor Devices

A method was evaluated to achieve good electrical contact on exposed silicon. The unique properties of the liquid metal alloy GaIn allow quantitative electrical results even after decapsulation or grinding into silicon chips. Moreover, it enables high-current measurements capability and can improve...

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Bibliographic Details
Published in:2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) pp. 1 - 5
Main Authors: Gnaem, Mohamed, Schoemann, Stephan, Zaki, Mohanad, Reiss, Marcus, Lechner, Simon
Format: Conference Proceeding
Language:English
Published: IEEE 24-07-2023
Subjects:
Current measurement
GaIn
high current measurements
Integrated circuits
Liquid metal
Liquids
Location awareness
Metals
ohmic contact
Schottky barriers
Semiconductor device measurement
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Description
Summary:A method was evaluated to achieve good electrical contact on exposed silicon. The unique properties of the liquid metal alloy GaIn allow quantitative electrical results even after decapsulation or grinding into silicon chips. Moreover, it enables high-current measurements capability and can improve localization contrast - and all of this at minimal effort.
ISSN:1946-1550
DOI:10.1109/IPFA58228.2023.10249030