Compact quasi planar silicon bandpass filters based on metallic periodic structure for Q and V band applications
Small size filters are presented here, they are based on a periodic lattice of metallic holes that form coupled silicon resonators. The first structure is a filter at 45 GHz with 8% bandwidth at -3 db, realized on 430 /spl mu/m thick high resistivity silicon wafer using a wet etching process. I/O CP...
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Published in: | 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) Vol. 3; pp. 1459 - 1462 Vol.3 |
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Main Authors: | , , , , , , , , |
Format: | Conference Proceeding |
Language: | English |
Published: |
Piscataway NJ
IEEE
2004
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Subjects: | |
Online Access: | Get full text |
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Summary: | Small size filters are presented here, they are based on a periodic lattice of metallic holes that form coupled silicon resonators. The first structure is a filter at 45 GHz with 8% bandwidth at -3 db, realized on 430 /spl mu/m thick high resistivity silicon wafer using a wet etching process. I/O CPW feeds are printed on the top of the substrate. The second structure is a filter at 58.5 GHz with 2% bandwidth at -3 db. The via holes lattice is realized with deep RIE process and the filter is bonded to a PCB with a flip chip technique. Based on the same principle, a CPW to waveguide transition is finally presented. |
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ISBN: | 0780383311 9780780383319 |
ISSN: | 0149-645X 2576-7216 |
DOI: | 10.1109/MWSYM.2004.1338848 |