Power Microwave Load with 40 GHz Bandwidth

Power Microwave Load with 40 GHz Bandwidth

The work describes a power microwave load with a bandwidth of 40 GHz. The load has silicon carbide (SiC) base and dissipated power of 50 W. The load has minor dimensions and simple, easy to produce construction. The temperature distribution on the surface of the resistive film is given.

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Bibliographic Details
Published in:2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE) pp. 194 - 195
Main Authors: Rebrov, Andrey N., Grigoriev, Andrey D.
Format: Conference Proceeding
Language:English
Published: IEEE 24-09-2020
Subjects:
Bandwidth
Electromagnetic heating
Microwave circuits
microwave matched load
Microwave photonics
Silicon carbide
Substrates
Surface impedance
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Description
Summary:The work describes a power microwave load with a bandwidth of 40 GHz. The load has silicon carbide (SiC) base and dissipated power of 50 W. The load has minor dimensions and simple, easy to produce construction. The temperature distribution on the surface of the resistive film is given.
DOI:10.1109/APEDE48864.2020.9255412