Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances

Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances

Several designs of 1.2kV-rated 4H-SiC JBS diode integrated MOSFETs (JBSFETs) have been successfully fabricated in order to increase the 3 rd quadrant device performance while having negligible effect on both the forward and blocking modes of operation. Incorporating the Schottky area in an efficient...

Full description

Saved in:
Bibliographic Details
Published in:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) pp. 101 - 106
Main Authors: Mancini, Stephen A, Jang, Seung Yup, Kim, Dongyoung, Sung, Woongje
Format: Conference Proceeding
Language:English
Published: IEEE 07-11-2021
Subjects:
3rd Quadrant
4H-Silicon Carbide (SiC)
Breakdown Voltage
Conferences
Design Approach
Fabrication
JBSFET
Leakage Current
MOSFET
Performance evaluation
Photonic band gap
Schottky barriers
Schottky diodes
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Several designs of 1.2kV-rated 4H-SiC JBS diode integrated MOSFETs (JBSFETs) have been successfully fabricated in order to increase the 3 rd quadrant device performance while having negligible effect on both the forward and blocking modes of operation. Incorporating the Schottky area in an efficient manner to improve overall device performance has been one of the critical paths in the development of 4H-SiC JBSFETs. Device design, fabrication, and electrical performances are discussed in this paper.
DOI:10.1109/WiPDA49284.2021.9645152