Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz

• Published in: IEEE electron device letters Vol. 24; no. 5; pp. 292 - 294
• Main Authors: Hafez, W., Jie-Wei Lai, Feng, M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-05-2003; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bipolar transistors; Bridge circuits; Current density; Cutoff frequency; Double heterojunction bipolar transistors; Etching; Heterojunction bipolar transistors; Optical device fabrication; Planarization; Voltage
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2003.812530

Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 ×16 μm have demonstrated a maximum current gain cutoff frequency f T of 377 GHz with a simultaneous maximum power gain cutoff frequency f max of 230 GHz at the current density Jc of 650 kA/cm 2 . Typical BV/sub CEO/ values exceed 3.7 V.