Effect of O2 Exposure on Silicon Field Emitter Arrays Style

The impact of Oxygen (O 2 ) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10 −10 Torr before 10- 7 Torr partial pressure of O 2 was introduced into the chamber. The results indicate tha...

Full description

Saved in:

Bibliographic Details
Published in:	2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC) pp. 134 - 136
Main Authors:	Asadi, Reza Farsad, Zheng, Tao, Rughoobur, Girish, Bhattacharya, Ranajoy, Browning, Jim, Akinwande, Akintunde I., Gnade, Bruce
Format:	Conference Proceeding
Language:	English
Published:	IEEE 10-07-2023
Subjects:	Accelerated life testing Field emitter arrays Life testing Logic gates O2 exposure Oxygen Packaging Reliability Silicon Silicon Field Emitter Arrays (Si-FEA) Vacuum packaging Voltage
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	The impact of Oxygen (O 2 ) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10 −10 Torr before 10- 7 Torr partial pressure of O 2 was introduced into the chamber. The results indicate that the anode current degradation rate is approximately 0.1 percent per Langmuir of O 2 exposure. This study can provide guidelines for the vacuum packaging requirements of Si-FEAs.
ISSN:	2380-6311
DOI:	10.1109/IVNC57695.2023.10188971