Manufacturable tri-stack AlSb/INAS HEMT low-noise amplifiers using wafer-level-packaging technology for light-weight and ultralow-power applications

• Published in: 2009 IEEE International Conference on Indium Phosphide & Related Materials pp. 200 - 203
• Main Authors: Chou, Y.C., Chang-Chien, P., Yang, J.M., Nishimoto, M.Y., Hennig, K., Lange, M.D., Zeng, X., Parlee, M.R., Lin, C.H., Lee, L.S., Nam, P.S., Wojtowicz, M., Barsky, M.E., Oki, A.K., Boos, J.B., Bennett, B.R., Papanicolaou, N.A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-05-2009
• Subjects: AlSb/InAs; Cutoff frequency; Electron mobility; Gallium arsenide; HEMT; HEMTs; Low-noise amplifiers; Manufacturing; Metallization; Molecular beam epitaxial growth; Power dissipation; Substrates; ultralow-power; wafer-level-packaging
• ISBN: 9781424434329; 1424434327
• ISSN: 1092-8669
• DOI: 10.1109/ICIPRM.2009.5012478

A wafer-level-packaging technology was used to integrate the 0.1 mum AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable tri-stack transmit/receive modules is essential for phased-array applications requiring light weight and ultralow power.