High current, high di/dt semiconductor devices for single- and repetitive pulse applications

• Published in: Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Vol. 2; pp. 1213 - 1216 Vol.2
• Main Authors: Welleman, A., Fleischmann, W.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2003
• Subjects: Availability; Ceramics; Design optimization; Driver circuits; Insulated gate bipolar transistors; Production; Semiconductor device reliability; Semiconductor devices; Silicon; Voltage
• ISBN: 0780379152; 9780780379152
• DOI: 10.1109/PPC.2003.1278031

A presentation is given about semiconductor devices specially designed for high di/dt and high current switching. These products include standard and optimized silicon designs with one or several chips in one ceramic housing. In this way, extreme high current and voltage ranges are achieved. With bipolar technology di/dt values of up to 50 KA//spl mu/s, and current capabilities of up to 150 kA is reached with one device. All presented devices are easy stackable and because most of them have an integrated driver unit. Also press-pack IGBT devices are presented with blocking voltages between 2.5 and 5.2 kV per device. These so-called StakPak™ IGBT devices offer a short circuit failure mode and an almost ideal current sharing in the module. All products presented are produced on production lines for standard high power semiconductors and therefore benefit from the same reliability, quality and availability.