High-Q inductors on digital VLSI CMOS substrate for analog RF applications

High-Q inductors on digital VLSI CMOS substrate for analog RF applications

In this paper, the design, modeling and performance of high-Q RF inductors using aggressively scaled digital VLSI CMOS technology are presented. Quality factors of 12.7 and 10, and self resonance frequencies of 45 GHz and 29 GHz are measured for inductors with values of 0.31 nH and 0.9 nH, respectiv...

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Bibliographic Details
Published in:Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678) Vol. 2; pp. 869 - 872 vol.2
Main Authors: Ellinger, F., Kossel, M., Huber, M., Schmatz, M., Kromer, C., Sialm, G., Barras, D., Rodoni, L., von Buren, G., Jackel, H.
Format: Conference Proceeding
Language:English
Published: IEEE 2003
Subjects:
CMOS technology
Conductivity
Inductors
Integrated circuit technology
MOSFETs
Q factor
Radio frequency
Spirals
Substrates
Very large scale integration
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Summary:In this paper, the design, modeling and performance of high-Q RF inductors using aggressively scaled digital VLSI CMOS technology are presented. Quality factors of 12.7 and 10, and self resonance frequencies of 45 GHz and 29 GHz are measured for inductors with values of 0.31 nH and 0.9 nH, respectively. The influence of parasitics is also investigated.
ISBN:0780378245
9780780378247
DOI:10.1109/IMOC.2003.1242694