Influence of plasma induced damage during active etch on silicon defect generation

• Published in: 2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) pp. 61 - 64
• Main Authors: Nallapati, G., Loiko, K.V.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2000
• Subjects: Circuit faults; Etching; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; Plasma sources; Silicon; Stacking
• ISBN: 0965157741; 9780965157742
• DOI: 10.1109/PPID.2000.870596

The role of plasma induced damage during active nitride etch in silicon defect generation was investigated. A correlation was established between the overetch pattern and surface densities of stacking faults and dislocations. High junction leakage and yield loss were observed in areas of the wafer subjected to excessive overetch. Optimization of overetch time resulted in defect free wafers and significant yield improvement.