The effects of a ground shield on spiral inductors fabricated in a silicon bipolar technology

The effects of a ground shield on spiral inductors fabricated in a silicon bipolar technology

The frequency dependence of the model parameters of patterned ground shield (PGS) inductors in large part is explained as a consequence of modeling a distributed system with a lumped model. Using an n/sup +/-buried/n-well PGS, the peak Q is improved by /spl sim/25% with small changes of L and C/sub...

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Bibliographic Details
Published in:Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) pp. 157 - 160
Main Authors: Seong-Mo Yim, Tong Chen, O, K.K.
Format: Conference Proceeding
Language:English
Published: IEEE 2000
Subjects:
Eddy currents
Frequency dependence
Inductors
Integrated circuit modeling
Integrated circuit technology
Microwave technology
Q factor
Shape
Silicon
Spirals
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Summary:The frequency dependence of the model parameters of patterned ground shield (PGS) inductors in large part is explained as a consequence of modeling a distributed system with a lumped model. Using an n/sup +/-buried/n-well PGS, the peak Q is improved by /spl sim/25% with small changes of L and C/sub p/. Having a PGS does not significantly improve isolation between inductors.
ISBN:9780780363847
0780363841
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2000.886193