mm-Wave Single-Pole Double-Throw switches: HBT- vs MOSFET-based designs

• Published in: 2021 19th IEEE International New Circuits and Systems Conference (NEWCAS) pp. 1 - 4
• Main Authors: Margalef-Rovira, M., Gaquiere, C., de Souza, A. Lisboa, Vincent, L., Barragan, M. J., Pistono, E., Podevin, F., Ferrari, P.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 13-06-2021
• Subjects: Bandwidth; BiCMOS; BiCMOS integrated circuits; Frequency measurement; HBT; Insertion loss; Loss measurement; mm-Wave; MOSFET; Power demand; S-CPW; slow-wave; SPDT
• DOI: 10.1109/NEWCAS50681.2021.9462753

This paper aims to compare the performance of HBT-based and MOSFET-based mm-Wave SPDT switches in a single BiCMOS technology. To the best of authors' knowledge, a direct comparison of this function in the same integrated process has never been reported before. Measurement results on two 50-GHz integrated SPDTs reveal that the HBT-based SPDT switch yields 1.7 dB of insertion loss and 14 dB of isolation in its central frequency, with a bandwidth covering the 30-80 GHz frequency range when considering a return loss greater than 10 dB. On the other hand, the MOSFET-based SPDT switch yields 2.1 dB of insertion loss and 12 dB of isolation at center frequency and a bandwidth covering the 33-80 GHz frequency range.