A 45RFSOI DC to 32 GHz Bandwidth Inductorless low power amplifier

A 45RFSOI DC to 32 GHz Bandwidth Inductorless low power amplifier

In this work, an ultra-wideband inductorless amplifier implemented in a 45nm CMOS SOI technology is presented. The amplifier operates over a DC to 32 GHz frequency range. The architecture allows a rail-to-rail operation for a supply voltage of 1V. The amplifier achieves 19 dB gain with the input ret...

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Bibliographic Details
Published in:2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) pp. 41 - 44
Main Authors: Yaakoubi, G., Martineau, B., Gonzalez, Jl
Format: Conference Proceeding
Language:English
Published: IEEE 16-01-2022
Subjects:
active negative feedback
current multiplexing
inductorless
low power
Power demand
Radio frequency
Sensors
Silicon
ultra wideband amplifier
Voltage
Wireless communication
Wireless sensor networks
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Summary:In this work, an ultra-wideband inductorless amplifier implemented in a 45nm CMOS SOI technology is presented. The amplifier operates over a DC to 32 GHz frequency range. The architecture allows a rail-to-rail operation for a supply voltage of 1V. The amplifier achieves 19 dB gain with the input return loss better than -10dB from DC to 12 GHz and output return loss better than -12dB overall bandwidth. The power consumption is 7.8 mW. The core size is only 0.000149 mm 2 . To the author's best knowledge, this amplifier provides the highest flat gain over the 32 GHz operation bandwidth and the smallest area compared to similar works in the literature.
ISSN:2474-9761
DOI:10.1109/SiRF53094.2022.9720055