A Methodology to Characterize the Low-Frequency Noise of InP Based Transistors

• Published in: 2008 European Microwave Integrated Circuit Conference pp. 123 - 126
• Main Authors: de Souza, A.A.L., Nallatamby, J.C., Prigent, M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-10-2008
• Subjects: Bipolar transistors; Circuit noise; Current measurement; Frequency; Impedance; Indium phosphide; Low-frequency noise; Noise measurement; Silicon carbide; Voltage
• ISBN: 9782874870071; 2874870072
• DOI: 10.1109/EMICC.2008.4772244

This paper describes a methodology to measure the low-frequency noise of InP-based transistors. These transistors have demonstrated transition frequencies (f t ) greater than 200 GHz, generally achieved at current densities in excess of 200 kA/cm 2 . Depending on the DC current gain, this may represent base currents of some mA. For the first time, curves of S ib , S ic and S ibic for base currents of up to 3 mA are demonstrated, in excellent agreement with those obtained from one-port measurements. This is only possible with an accurate experimental characterisation of the small-signal parameters of the transistor, which are frequency-dependent due to self-heating.