Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls

Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls

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Bibliographic Details
Published in:IEEE electron device letters Vol. 26; no. 9; pp. 601 - 603
Main Authors: WICHMANN, N, DUSZYNSKI, I, WALLART, X, BOLLAERT, S, CAPPY, A
Format: Journal Article
Language:English
Published: New York, NY Institute of Electrical and Electronics Engineers 01-09-2005
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Voltage threshold
double-gate (DG)
Oscillation frequency
Microwave
Polymer
InP
Cut off frequency
Millimetric wave
High electron mobility transistor
transferred substrate
bonding
Wave mixing
velocity modulation transistor (VMT)
Benzocyclobutene (BCB)
High frequency
high electron mobility transistor (HEMT)
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Description
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.854353