Packageless temperature sensor based on AlN/IDT/ZnO/Silicon layered structure

The possibility to generate simultaneously Surface Acoustic Wave (SAW) and Waveguiding layer acoustic wave (WLAW) in layered structures AlN/ZnO/Silicon was investigated. A delay line operating at 525 MHz was tested versus temperature in air and in contact with liquid. Experimental characterizations...

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Bibliographic Details
Published in:	2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC) pp. 259 - 261
Main Authors:	Legrani, O., Elmazria, O., Elhosni, M., Bartasyte, A., Pigeat, P., Zghoon, S.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-07-2013
Subjects:	AlN III-V semiconductor materials packageless Silicon Surface acoustic waves temperature sensor Temperature sensors Zinc oxide ZnO
Online Access:	Get full text
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Summary:	The possibility to generate simultaneously Surface Acoustic Wave (SAW) and Waveguiding layer acoustic wave (WLAW) in layered structures AlN/ZnO/Silicon was investigated. A delay line operating at 525 MHz was tested versus temperature in air and in contact with liquid. Experimental characterizations were also supported by modeling using the commercial software (COMSOL Multiphysics). The full delay line was simulated and liquid modeled by an additional layer on the top of AlN film.
DOI:	10.1109/EFTF-IFC.2013.6702265