Tunnel and capacitive coupling optimization in FDSOI spin-qubit devices

• Published in: 2023 International Electron Devices Meeting (IEDM) pp. 1 - 4
• Main Authors: Bertrand, B., Martinez, B., Li, J., Paz, B. Cardoso, Millory, V., Labracherie, V., Brevard, L., Sahin, H., Roussely, G., Sarrazin, A., Meunier, T., Vinet, M., Niquet, Y.-M., Brun, B., Maurand, R., De Franceschi, S., Niebojewski, H.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 09-12-2023
• Subjects: Couplings; Logic gates; Optimization; Sensors; Silicon; Silicon-on-insulator; Stability analysis
• ISSN: 2156-017X
• DOI: 10.1109/IEDM45741.2023.10413763

We present the ongoing development towards a spin qubit platform compatible with an industrial FDSOI CMOS fabrication flow. We introduce new patterning modules to suppress the diagonal tunnel coupling in quantum dot arrays and fabricate nanowire pairs for non-invasive charge sensing. Numerical simulation of the devices provides guidelines for optimization of the detection sensitivity up to quantum computing requirements.