Synthesis, Structure and Application of Intramolecularly‐Coordinated Gallium Chalcogenides: Suitable Single‐Source precursors for GaxSey Materials

• Published in: Chemistry : a European journal Vol. 24; no. 54; pp. 14470 - 14476
• Main Authors: Řičica, Tomáš, Dostál, Libor, Růžičková, Zdenka, Beneš, Ludvík, Němec, Petr, Bouška, Marek, Macak, Jan M., Knotek, Petr, Ruleová, Pavlína, Jambor, Roman
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 25-09-2018
• Subjects: Chelation; Chemistry; Crystals; doping; Gallium; Gallium triselenide; GaxSey material; group 13 element; Intermetallic compounds; Precursors; Selenides; Selenium; Spin coating; Synthesis; Tellurides; Tellurium; Thin films; thin layer; doping; thin layer; GaXSeY material; 13 group element; spin coating
• ISSN: 0947-6539; 1521-3765
• DOI: 10.1002/chem.201802688

Studies have been focused on the synthesis of N→Ga‐coordinated organogallium selenides and tellurides [L1Ga(μ‐Se)]2 (1), [L2Ga(μ‐Se)]2 (2) and [L1Ga(μ‐Te)]2 (3), respectively, containing either N,C,N‐ or C,N‐chelating ligands L1, 2 (L1 is {2,6‐(Me2NCH2)2C6H3}− and L2 is {2‐(Et2NCH2)‐4,6‐tBu2‐C6H2}−) having Ga/E (E=Se or Te) atoms in 1/1 ratio. To change the Ga/E ratio, an unusual N→Ga‐coordinated organogallium tetraselenide L1Ga(κ2‐Se4) (4) was prepared. An unprecedented complex (L1Ga)2(μ‐Te2)(μ‐Te) (5), as the result of the non‐stability of 3, was also isolated. Compound 2 is a suitable single‐source precursor for the preparation of amorphous GaSe thin films by the spin coating. Moreover, simple heating of an octadecylamine solution of 2 provided, after work up, monoclinic Ga2Se3 crystals with different crystallinity according to conditions used. Therefore, compound 2 may be also used as a source of Ga2Se3 in the low‐temperature doping process of Bi2Se3.
Single‐source precursor: Synthesis of gallium chalcogenides with Ga2Se2, GaSe4 or Ga2Te3 rings is shown. The dimeric species has been successfully applied for amorphous GaSe thin film preparation, as well as for doping of Bi2Se3. A new low‐temperature doping process provided evidence of a new phase Ga2BiSe4.