Excited-state spin-resonance spectroscopy of V $_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ B − defect centers in hexagonal boron nitride

Excited-state spin-resonance spectroscopy of V $_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ B − defect centers in hexagonal boron nitride

The negatively charged boron vacancy in hBN shows promise as a quantum sensor, but, until recently, the focus has been on its ground-state properties. Here, the authors report temperature-dependent spin-resonance optical spectroscopy of the orbital excited state.

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Bibliographic Details
Published in:Nature communications Vol. 13; no. 1; pp. 1 - 7
Main Authors: Nikhil Mathur, Arunabh Mukherjee, Xingyu Gao, Jialun Luo, Brendan A. McCullian, Tongcang Li, A. Nick Vamivakas, Gregory D. Fuchs
Format: Journal Article
Language:English
Published: Nature Portfolio 01-12-2022
Online Access:Get full text
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Description
Summary:The negatively charged boron vacancy in hBN shows promise as a quantum sensor, but, until recently, the focus has been on its ground-state properties. Here, the authors report temperature-dependent spin-resonance optical spectroscopy of the orbital excited state.
ISSN:2041-1723
DOI:10.1038/s41467-022-30772-z