Interface effects on the resonant tunnelling in GaAs/Al Ga1−As double-quantum-well triple-barriers

Interface effects on the resonant tunnelling in GaAs/Al Ga1−As double-quantum-well triple-barriers

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Published in:Microelectronic engineering Vol. 43-44; pp. 191 - 195
Main Authors: Lima, Maria Consuelo A, Farias, Gil A, Freire, Valder N
Format: Journal Article
Language:English
Published: 01-08-1998
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Author Lima, Maria Consuelo A
Farias, Gil A
Freire, Valder N
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CitedBy_id crossref_primary_10_1016_j_ijleo_2019_03_129
crossref_primary_10_1080_14786435_2018_1549370
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10.1103/PhysRevB.52.5777
10.1103/PhysRevLett.62.933
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10.1063/1.350876
10.1006/spmi.1995.1069
10.1103/PhysRev.152.683
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10.1103/PhysRevB.50.11693
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10.1063/1.349613
10.1006/spmi.1994.1041
10.1063/1.1655067
10.1016/0038-1098(94)90865-6
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Title Interface effects on the resonant tunnelling in GaAs/Al Ga1−As double-quantum-well triple-barriers
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